The HD+dissociative recombination rate coefficient at low temperature

Experimental N v and Ne viii low - temperature dielectronic recombination rate coefficients

The dielectronic recombination rate coefficients of N v and Ne viii ions have been measured at a heavy-ion storage ring. The investigated energy ranges covered all dielectronic recombination resonances attached to 2s → 2p (∆n = 0) core excitations. The rate coefficients in a plasma are derived and parameterized by using a convenient fit formula. The experimentally derived rate coefficients are ...

Lyophilizing Foot-and Mouth Disease Virus at Low Drying Temperature

Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

Kinetics of chalcopyrite galvanic leaching using sulfate media at the low temperature in the GalvanoxTM process

In this research work, the dissolution of chalcopyrite was investigated under atmospheric pressure, with sulfate media at low temperatures, in 30°C to 50°C. In the galvanic interaction between chalcopyrite and pyrite, pyrite is used as a leaching catalyst. Effects of different parameters such as temperature, stirring speed, pyrite to chalcopyrite ratio, particle size, and solution potential wer...

Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon